Professor

Wu,Jiang


Professor

Email: jiangwu(at)uestc.edu.cn

Office phone: +86-28-83208922

Education

2008.08-2011.12             University of Arkansas             Ph.D

2006.08-2008.08             University of Arkansas             M.S.

2002.09-2006.09             University of Electronic Science and Technology of China     B.S.


Work Experience

2018.03-Present            University of Electronic Science and Technology of China      Professor

2015.10-2018.02           University College London               Lecturer

2012.12-2015.09           University College London               Research Associate

2013.01-2015.11           University of Electronic Science and Technology of China      Research Professor

2011.12-2012.12           University of Electronic Science and Technology of China      Associate Professor


Research Interests

Optoelectronic devices and technologies,Photonics,Semiconductor science and information devices,Information function material


Selected Publications

1. Jian Huang, Daqian Guo, Zhuo Deng, Wei Chen, Tinghui Wu, Huiyun Liu, Jiang Wu*, Baile Chen, “Mid-infrared sub-monolayer quantum dot quantum cascade photodetector monolithically grown on silicon substrate,” Journal of Lightwave Technology, 36, 4033, 2018.

2. Daqian Guo, Qi Jiang, Mingchu Tang, Siming Chen, Yuriy I. Mazur, Y. Maidaniuk, Mourad Benamara, Mykhaylo P. Semtsiv, William. T. Masselink, Gregory J. Salamo, Huiyun Liu, Jiang Wu*, “Two-color In0.5Ga0.5As quantum dot infrared photodetectors on silicon,” Semiconductor Science and Technology, 33, 094009, 2018.

3. Zhuo Deng, Baile Chen, Xiren Chen, Jun Shao, Qian Gong, Huiyun Liu, and Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate,” Infrared Physics & Technology 90, 115–121, 2018.

4.Wei Chen, Zhuo Deng, Daqian Guo, Yaojiang Chen, Yuriy I. Mazur, Yurii Maidaniuk, Gregory J. Salamo, Huiyun Liu, Jiang Wu*, Baile Chen, “Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate,” Journal of Lightwave Technology, 36, 2572 – 2581, 2017

5. Hao Xu, Xiaoyu Han, Xiao Dai, Wei Liu, Jiang Wu*, Juntong Zhu, Dongyoung Kim, Guifu Zou, Kimberley A. Sablon, Andrei Sergeev, Zhengxiao Guo, Huiyun Liu, “High Detectivity and Transparent Few-layer MoS2/Glassy-Graphene Heterostructure Photodetectors,” Advanced Materials, vol. 30, 1706561, 2018.

6. Claudia Gonzalez Burguete, Daqian Guo, Pamela Jurczak, Fan Cui, Mingchu Tang, Wei Chen, Zhuo Deng, Yaojiang Chen, Marina Gutiérrez, Baile Chen, Huiyun Liu, Jiang Wu*, “Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates,” IET Optoelectronics, vol. 12, 2 – 4, 2018.

7. Pamela Jurczak, Kimberly A. Sablon, Marina Gutiérrez, Huiyun Liu, and Jiang Wu*, “2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique,” Infrared Physics and Technology, 81, 320-324, 2017.

8. Siming Chen, Wei Li, Jiang Wu, Qi Jiang, Mingchu Tang, Samuel Shutts, Stella Elliott, Angela Sobiesierski, Alwyn Seeds, Ian Ross, Peter Smowton, Huiyun Liu, “Electrically-pumped continuous-wave III-V quantum-dot lasers on silicon,” Nature Photonics, 10, 307–311, 2016.

9. Jiang Wu, P. Yu, A.S. Susha, K.A. Sablon, H. Chen, Z. Zhou, H. Li, H. Ji, X. Niu, A.L. Rogach, A.O. Govorov, Z.M. Wang, “Broadband Efficiency Enhancement in Quantum Dot Solar Cells with Multispiked Plasmonic Nanostars,” Nano Energy, 13, 827–835, 2015.

      10.Jiang Wu, D. Shao, V.G. Dorogan, Z. Li, Z.M. Wang, O. Manasreh, Y.I. Mazur, G.J. Salamo, “Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High Temperature Droplet Epitaxy,” Nano Lett., vol. 10, pp 1512–1516, 2010. 




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